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| Contents | ||||||
| Preface | vii | |||||
| Chapter 1 Introduction | 1 | |||||
| 1.1 | Ideal and Typical Power Switching Waveforms | 3 | ||||
| 1.2 | Ideal and Typical Power Device Characteristics | 5 | ||||
| 1.3 | Unipolar Power Devices | 8 | ||||
| 1.4 | Bipolar Power Devices | 10 | ||||
| 1.5 | MOS-Bipolar Power Devices | 11 | ||||
| 1.6 | Ideal Drift Region for Unipolar Power Devices | 14 | ||||
| 1.7 | Charge-Coupled Structures: Ideal Specific On-Resistance | 16 | ||||
| 1.8 | Summary | 21 | ||||
| Problems | 21 | |||||
| References | 22 | |||||
| Chapter 2 Material Properties and Transport Physics | 23 | |||||
| 2.1 | Fundamental Properties | 23 | ||||
| 2.1.1 | Intrinsic Carrier Concentration | 25 | ||||
| 2.1.2 | Bandgap Narrowing | 26 | ||||
| 2.1.3 | Built-in Potential | 30 | ||||
| 2.1.4 | Zero-Bias Depletion Width | 32 | ||||
| 2.1.5 | Impact Ionization Coefficients | 32 | ||||
| 2.1.6 | Carrier Mobility | 34 | ||||
| 2.2 | Resistivity | 51 | ||||
| 2.2.1 | Intrinsic Resistivity | 51 | ||||
| 2.2.2 | Extrinsic Resistivity | 51 | ||||
| 2.2.3 | Neutron Transmutation Doping | 55 | ||||
| 2.3 | Recombination Lifetime | 59 | ||||
| 2.3.1 | Shockley-Read-Hall Recombination | 60 | ||||
| 2.3.2 | Low-Level Lifetime | 63 | ||||
| 2.3.3 | Space-Charge Generation Lifetime | 65 | ||||
| 2.3.4 | Recombination Level Optimization | 66 | ||||
| 2.3.5 | Lifetime Control | 75 | ||||
| 2.3.6 | Auger Recombination | 80 | ||||
| 2.4 | Ohmic Contacts | 82 | ||||
| 2.5 | Summary | 84 | ||||
| Problems | 84 | |||||
| References | 86 | |||||
| Chapter 3 Breakdown Voltage | 91 | |||||
| 3.1 | Avalanche Breakdown | 92 | ||||
| 3.1.1 | Power Law Approximations for the Impact Ionization Coefficients | 92 | ||||
| 3.1.2 | Multiplication Coefficient | 94 | ||||
| 3.2 | Abrupt One-Dimensional Diode | 95 | ||||
| 3.3 | Ideal Specific On-Resistance | 100 | ||||
| 3.4 | Abrupt Punch-Through Diode | 101 | ||||
| 3.5 | Linearly Graded Junction Diode | 104 | ||||
| 3.6 | Edge Terminations | 107 | ||||
| 3.6.1 | Planar Junction Termination | 108 | ||||
| 3.6.2 | Planar Junction with Floating Field Ring | 120 | ||||
| 3.6.3 | Planar Junction with Multiple Floating Field Rings | 130 | ||||
| 3.6.4 | Planar Junction with Field Plate | 132 | ||||
| 3.6.5 | Planar Junction with Field Plates and Field Rings | 137 | ||||
| 3.6.6 | Bevel Edge Terminations | 137 | ||||
| 3.6.7 | Etch Terminations | 148 | ||||
| 3.6.8 | Junction Termination Extension | 149 | ||||
| 3.7 | Open-Base Transistor Breakdown | 155 | ||||
| 3.7.1 | Composite Bevel Termination | 159 | ||||
| 3.7.2 | Double-Positive Bevel Termination | 159 | ||||
| 3.8 | Surface Passivation | 162 | ||||
| 3.9 | Summary | 162 | ||||
| Problems | 163 | |||||
| References | 164 | |||||
| Chapter 4 Schottky Rectifiers | 167 | |||||
| 4.1 | Power Schottky Rectifier Structure | 168 | ||||
| 4.2 | Metal-Semiconductor Contact | 169 | ||||
| 4.3 | Forward Conduction | 171 | ||||
| 4.4 | Reverse Blocking | 179 | ||||
| 4.4.1 | Leakage Current | 180 | ||||
| 4.4.2 | Schottky Barrier Lowering | 181 | ||||
| 4.4.3 | Prebreakdown Avalanche Multiplication | 184 | ||||
| 4.4.4 | Silicon Carbide Rectifiers | 185 | ||||
| 4.5 | Device Capacitance | 187 | ||||
| 4.6 | Thermal Considerations | 188 | ||||
| 4.7 | Fundamental Tradeoff Analysis | 192 | ||||
| 4.8 | Device Technology | 194 | ||||
| 4.9 | Barrier Height Adjustment | 194 | ||||
| 4.10 | Edge Terminations | 197 | ||||
| 4.11 | Summary | 198 | ||||
| Problems | 199 | |||||
| References | 200 | |||||
| Chapter 5 P-i-N Rectifiers | 203 | |||||
| 5.1 | One-Dimensional Structure | 204 | ||||
| 5.1.1 | Recombination Current | 205 | ||||
| 5.1.2 | Low-Level Injection Current | 206 | ||||
| 5.1.3 | High-Level Injection Current | 208 | ||||
| 5.1.4 | Injection into the End Regions | 217 | ||||
| 5.1.5 | Carrier-Carrier Scattering Effect | 219 | ||||
| 5.1.6 | Auger Recombination Effect | 219 | ||||
| 5.1.7 | Forward Conduction Characteristics | 221 | ||||
| 5.2 | Silicon Carbide P-i-N Rectifiers | 230 | ||||
| 5.3 | Reverse Blocking | 232 | ||||
| 5.4 | Switching Performance | 236 | ||||
| 5.4.1 | Forward Recovery | 236 | ||||
| 5.4.2 | Reverse Recovery | 244 | ||||
| 5.5 | P-i-N Rectifier Structure with Buffer Layer | 262 | ||||
| 5.6 | Nonpunch-Through P-i-N Rectifier Structure | 263 | ||||
| 5.7 | P-i-N Rectifier Tradeoff Curves | 270 | ||||
| 5.8 | Summary | 274 | ||||
| Problems | 275 | |||||
| References | 276 | |||||
| Chapter 6 Power MOSFETs | 279 | |||||
| 6.1 | Ideal Specific On-Resistance | 280 | ||||
| 6.2 | Device Cell Structure and Operation | 282 | ||||
| 6.2.1 | The V-MOSFET Structure | 283 | ||||
| 6.2.2 | The VD-MOSFET Structure | 284 | ||||
| 6.2.3 | The U-MOSFET Structure | 285 | ||||
| 6.3 | Basic Device Characteristics | 286 | ||||
| 6.4 | Blocking Voltage | 289 | ||||
| 6.4.1 | Impact of Edge Termination | 289 | ||||
| 6.4.2 | Impact of Graded Doping Profile | 290 | ||||
| 6.4.3 | Impact of Parasitic Bipolar Transistor | 291 | ||||
| 6.4.4 | Impact of Cell Pitch | 293 | ||||
| 6.4.5 | Impact of Gate Shape | 296 | ||||
| 6.4.6 | Impact of Cell Surface Topology | 298 | ||||
| 6.5 | Forward Conduction Characteristics | 300 | ||||
| 6.5.1 | MOS Interface Physics | 301 | ||||
| 6.5.2 | MOS Surface Charge Analysis | 305 | ||||
| 6.5.3 | Maximum Depletion Width | 310 | ||||
| 6.5.4 | Threshold Voltage | 311 | ||||
| 6.5.5 | Channel Resistance | 321 | ||||
| 6.6 | Power VD-MOSFET On-Resistance | 327 | ||||
| 6.6.1 | Source Contact Resistance | 329 | ||||
| 6.6.2 | Source Region Resistance | 330 | ||||
| 6.6.3 | Channel Resistance | 331 | ||||
| 6.6.4 | Accumulation Resistance | 332 | ||||
| 6.6.5 | JFET Resistance | 333 | ||||
| 6.6.6 | Drift Region Resistance | 335 | ||||
| 6.6.7 | N+Substrate Resistance | 339 | ||||
| 6.6.8 | Drain Contact Resistance | 339 | ||||
| 6.6.9 | Total On-Resistance | 340 | ||||
| 6.7 | Power VD-MOSFET Cell Optimization | 343 | ||||
| 6.7.1 | Optimization of Gate Electrode Width | 343 | ||||
| 6.7.2 | Impact of Breakdown Voltage | 345 | ||||
| 6.7.3 | Impact of Design Rules | 348 | ||||
| 6.7.4 | Impact of Cell Topology | 350 | ||||
| 6.8 | Power U-MOSFET On-Resistance | 358 | ||||
| 6.8.1 | Source Contact Resistance | 359 | ||||
| 6.8.2 | Source Region Resistance | 361 | ||||
| 6.8.3 | Channel Resistance | 361 | ||||
| 6.8.4 | Accumulation Resistance | 362 | ||||
| 6.8.5 | Drift Region Resistance | 363 | ||||
| 6.8.6 | N+Substrate Resistance | 364 | ||||
| 6.8.7 | Drain Contact Resistance | 365 | ||||
| 6.8.8 | Total On-Resistance | 365 | ||||
| 6.9 | Power U-MOSFET Cell Optimization | 368 | ||||
| 6.9.1 | Orthogonal P-Base Contact Structure | 368 | ||||
| 6.9.2 | Impact of Breakdown Voltage | 371 | ||||
| 6.9.3 | Ruggedness Improvement | 372 | ||||
| 6.10 | Square-Law Transfer Characteristics | 373 | ||||
| 6.11 | Superlinear Transfer Characteristics | 377 | ||||
| 6.12 | Output Characteristics | 381 | ||||
| 6.13 | Device Capacitances | 385 | ||||
| 6.13.1 | Basic MOS Capacitance | 386 | ||||
| 6.13.2 | Power VD-MOSFET Structure Capacitances | 389 | ||||
| 6.13.3 | Power U-MOSFET Structure Capacitances | 399 | ||||
| 6.13.4 | Equivalent Circuit | 408 | ||||
| 6.14 | Gate Charge | 409 | ||||
| 6.14.1 | Charge Extraction | 409 | ||||
| 6.14.2 | Voltage and Current Dependence | 417 | ||||
| 6.14.3 | VD-MOSFET vs. U-MOSFET Structure | 421 | ||||
| 6.14.4 | Impact of VD-MOSFET and U-MOSFET Cell Pitch | 423 | ||||
| 6.15 | Optimization for High Frequency Operation | 426 | ||||
| 6.15.1 | Input Switching Power Loss | 427 | ||||
| 6.15.2 | Output Switching Power Loss | 432 | ||||
| 6.15.3 | Gate Propagation Delay | 434 | ||||
| 6.16 | Switching Characteristics | 436 | ||||
| 6.16.1 | Turn-On Transient | 437 | ||||
| 6.16.2 | Turn-Off Transient | 440 | ||||
| 6.16.3 | Switching Power Losses | 443 | ||||
| 6.16.4 | [dV/dt] Capability | 443 | ||||
| 6.17 | Safe Operating Area | 447 | ||||
| 6.17.1 | Bipolar Second Breakdown | 449 | ||||
| 6.17.2 | MOS Second Breakdown | 451 | ||||
| 6.18 | Integral Body Diode | 452 | ||||
| 6.18.1 | Reverse Recovery Enhancement | 453 | ||||
| 6.18.2 | Impact of Parasitic Bipolar Transistor | 453 | ||||
| 6.19 | High-Temperature Characteristics | 454 | ||||
| 6.19.1 | Threshold Voltage | 454 | ||||
| 6.19.2 | On-Resistance | 455 | ||||
| 6.19.3 | Saturation Transconductance | 456 | ||||
| 6.20 | Complementary Devices | 457 | ||||
| 6.20.1 | The p-Channel Structure | 458 | ||||
| 6.20.2 | On-Resistance | 458 | ||||
| 6.20.3 | Deep-Trench Structure | 459 | ||||
| 6.21 | Silicon Power MOSFET Process Technology | 460 | ||||
| 6.21.1 | Planar VD-MOSFET Process | 460 | ||||
| 6.21.2 | Trench U-MOSFET Process | 462 | ||||
| 6.22 | Silicon Carbide Devices | 465 | ||||
| 6.22.1 | The Baliga-Pair Configuration | 465 | ||||
| 6.22.2 | Planar Power MOSFET Structure | 476 | ||||
| 6.22.3 | Shielded Planar Power MOSFET Structures | 481 | ||||
| 6.22.4 | Shielded Trench-Gate Power MOSFET Structure | 489 | ||||
| 6.23 | Summary | 498 | ||||
| Problems | 499 | |||||
| References | 503 | |||||
| Chapter 7 Bipolar Junction Transistors | 507 | |||||
| 7.1 | Power Bipolar Junction Transistor Structure | 508 | ||||
| 7.2 | Basic Operating Principles | 510 | ||||
| 7.3 | Static Blocking Characteristics | 513 | ||||
| 7.3.1 | Open-Emitter Breakdown Voltage | 514 | ||||
| 7.3.2 | Open-Base Breakdown Voltage | 514 | ||||
| 7.3.3 | Shorted Base-Emitter Operation | 516 | ||||
| 7.4 | Current Gain | 520 | ||||
| 7.4.1 | Emitter Injection Efficiency | 522 | ||||
| 7.4.2 | Emitter Injection Efficiency with Recombination in the Depletion Region | 526 | ||||
| 7.4.3 | Emitter Injection Efficiency with High-Level Injection in the Base | 528 | ||||
| 7.4.4 | Base Transport Factor | 533 | ||||
| 7.4.5 | Base Widening at High Collector Current Density | 536 | ||||
| 7.5 | Emitter Current Crowding | 550 | ||||
| 7.5.1 | Low-Level Injection in the Base | 551 | ||||
| 7.5.2 | High-Level Injection in the Base | 555 | ||||
| 7.5.3 | Emitter Geometry | 559 | ||||
| 7.6 | Output Characteristics | 560 | ||||
| 7.7 | On-State Characteristics | 565 | ||||
| 7.7.1 | Saturation Region | 566 | ||||
| 7.7.2 | Quasisaturation Region | 571 | ||||
| 7.8 | Switching Characteristics | 574 | ||||
| 7.8.1 | Turn-On Transition | 575 | ||||
| 7.8.2 | Turn-Off Transition | 588 | ||||
| 7.9 | Safe Operating Area | 607 | ||||
| 7.9.1 | Forward-Biased Second Breakdown | 608 | ||||
| 7.9.2 | Reverse-Biased Second Breakdown | 611 | ||||
| 7.9.3 | Boundary for Safe Operating Area | 615 | ||||
| 7.10 | Darlington Configuration | 616 | ||||
| 7.11 | Summary | 619 | ||||
| Problems | 619 | |||||
| References | 621 | |||||
| Chapter 8 Thyristors | 625 | |||||
| 8.1 | Power Thyristor Structure and Operation | 628 | ||||
| 8.2 | Blocking Characteristics | 631 | ||||
| 8.2.1 | Reverse-Blocking Capability | 632 | ||||
| 8.2.2 | Forward-Blocking Capability | 636 | ||||
| 8.2.3 | Cathode Shorting | 641 | ||||
| 8.2.4 | Cathode Shorting Geometry | 644 | ||||
| 8.3 | On-State Characteristics | 651 | ||||
| 8.3.1 | On-State Operation | 652 | ||||
| 8.3.2 | Gate-Triggering Current | 654 | ||||
| 8.3.3 | Holding Current | 657 | ||||
| 8.4 | Switching Characteristics | 662 | ||||
| 8.4.1 | Turn-On Time | 663 | ||||
| 8.4.2 | Gate Design | 671 | ||||
| 8.4.3 | Amplifying Gate Design | 672 | ||||
| 8.4.4 | [dV/dt] Capability | 675 | ||||
| 8.4.5 | Turn-Off Process | 683 | ||||
| 8.5 | Light-Activated Thyristors | 685 | ||||
| 8.5.1 | [dI/dt] Capability | 686 | ||||
| 8.5.2 | Gate Region Design | 687 | ||||
| 8.5.3 | Optically Generated Current Density | 688 | ||||
| 8.5.4 | Amplifying Gate Design | 690 | ||||
| 8.6 | Self-Protected Thyristors | 691 | ||||
| 8.6.1 | Forward Breakdown Protection | 691 | ||||
| 8.6.2 | [dV/dt] Turn-On Protection | 694 | ||||
| 8.7 | The Gate Turn-Off Thyristor Structure | 698 | ||||
| 8.7.1 | Basic Structure and Operation | 698 | ||||
| 8.7.2 | One-Dimensional Turn-Off Criterion | 701 | ||||
| 8.7.3 | One-Dimensional Storage Time Analysis | 703 | ||||
| 8.7.4 | Two-Dimensional Storage Time Model | 704 | ||||
| 8.7.5 | One-Dimensional Voltage Rise Time Model | 706 | ||||
| 8.7.6 | One-Dimensional Current Fall Time Model | 709 | ||||
| 8.7.7 | Switching Energy Loss | 721 | ||||
| 8.7.8 | Maximum Turn-Off Current | 722 | ||||
| 8.7.9 | Cell Design and Layout | 725 | ||||
| 8.8 | The Triac Structure | 726 | ||||
| 8.8.1 | Basic Structure and Operation | 728 | ||||
| 8.8.2 | Gate-Triggering Mode 1 | 729 | ||||
| 8.8.3 | Gate-Triggering Mode 2 | 730 | ||||
| 8.8.4 | [dV/dt] Capability | 731 | ||||
| 8.9 | Summary | 733 | ||||
| Problems | 733 | |||||
| References | 735 | |||||
| Chapter 9 Insulated Gate Bipolar Transistors | 737 | |||||
| 9.1 | Basic Device Structures | 741 | ||||
| 9.2 | Device Operation and Output Characteristics | 745 | ||||
| 9.3 | Device Equivalent Circuit | 748 | ||||
| 9.4 | Blocking Characteristics | 748 | ||||
| 9.4.1 | Symmetric Structure Forward-Blocking Capability | 748 | ||||
| 9.4.2 | Symmetric Structure Reverse-Blocking Capability | 753 | ||||
| 9.4.3 | Symmetric Structure Leakage Current | 754 | ||||
| 9.4.4 | Asymmetric Structure Forward-Blocking Capability | 760 | ||||
| 9.4.5 | Asymmetric Structure Reverse-Blocking Capability | 767 | ||||
| 9.4.6 | Asymmetric Structure Leakage Current | 769 | ||||
| 9.5 | On-State Characteristics | 776 | ||||
| 9.5.1 | On-State Model | 776 | ||||
| 9.5.2 | On-State Carrier Distribution: Symmetric Structure | 783 | ||||
| 9.5.3 | On-State Voltage Drop: Symmetric Structure | 791 | ||||
| 9.5.4 | On-State Carrier Distribution: Asymmetric Structure | 796 | ||||
| 9.5.5 | On-State Voltage Drop: Asymmetric Structure | 803 | ||||
| 9.5.6 | On-State Carrier Distribution: Transparent Emitter Structure | 808 | ||||
| 9.5.7 | On-State Voltage Drop: Transparent Emitter Structure | 813 | ||||
| 9.6 | Current Saturation Model | 815 | ||||
| 9.6.1 | Carrier Distribution: Symmetric Structure | 820 | ||||
| 9.6.2 | Output Characteristics: Symmetric Structure | 828 | ||||
| 9.6.3 | Output Resistance: Symmetric Structure | 833 | ||||
| 9.6.4 | Carrier Distribution: Asymmetric Structure | 834 | ||||
| 9.6.5 | Output Characteristics: Asymmetric Structure | 844 | ||||
| 9.6.6 | Output Resistance: Asymmetric Structure | 848 | ||||
| 9.6.7 | Carrier Distribution: Transparent Emitter Structure | 849 | ||||
| 9.6.8 | Output Characteristics : Transparent Emitter Structure | 853 | ||||
| 9.6.9 | Output Resistance: Transparent Emitter Structure | 855 | ||||
| 9.7 | Switching Characteristics | 856 | ||||
| 9.7.1 | Turn-On Physics: Forward Recovery | 857 | ||||
| 9.7.2 | Turn-Off Physics: No-Load Conditions | 865 | ||||
| 9.7.3 | Turn-Off Physics: Resistive Load | 867 | ||||
| 9.7.4 | Turn-Off Physics: Inductive Load | 876 | ||||
| 9.7.5 | Energy Loss per Cycle | 904 | ||||
| 9.8 | Power Loss Optimization | 907 | ||||
| 9.8.1 | Symmetric Structure | 907 | ||||
| 9.8.2 | Asymmetric Structure | 909 | ||||
| 9.8.3 | Transparent Emitter Structure | 911 | ||||
| 9.8.4 | Comparison of Tradeoff Curves | 912 | ||||
| 9.9 | Complementary (P-Channel) Structure | 913 | ||||
| 9.9.1 | On-State Characteristics | 915 | ||||
| 9.9.2 | Switching Characteristics | 919 | ||||
| 9.9.3 | Power Loss Optimization | 919 | ||||
| 9.10 | Latch-Up Suppression | 920 | ||||
| 9.10.1 | Deep P+Diffusion | 922 | ||||
| 9.10.2 | Shallow P+Layer | 928 | ||||
| 9.10.3 | Reduced Gate Oxide Thickness | 931 | ||||
| 9.10.4 | Bipolar Current Bypass | 936 | ||||
| 9.10.5 | Diverter Structure | 939 | ||||
| 9.10.6 | Cell Topology | 943 | ||||
| 9.10.7 | Latch-Up Proof Structure | 948 | ||||
| 9.11 | Safe Operating Area | 951 | ||||
| 9.11.1 | Forward-Biased Safe Operating Area | 952 | ||||
| 9.11.2 | Reverse-Biased Safe Operating Area | 956 | ||||
| 9.11.3 | Short-Circuit Safe Operating Area | 960 | ||||
| 9.12 | Trench-Gate Structure | 966 | ||||
| 9.12.1 | Blocking Mode | 967 | ||||
| 9.12.2 | On-State Carrier Distribution | 969 | ||||
| 9.12.3 | On-State Voltage Drop | 971 | ||||
| 9.12.4 | Switching Characteristics | 973 | ||||
| 9.12.5 | Safe Operating Area | 974 | ||||
| 9.12.6 | Modified Structures | 978 | ||||
| 9.13 | Blocking Voltage Scaling | 980 | ||||
| 9.13.1 | N-Base Design | 981 | ||||
| 9.13.2 | Power MOSFET Baseline | 982 | ||||
| 9.13.3 | On-State Characteristics | 982 | ||||
| 9.13.4 | Tradeoff Curve | 985 | ||||
| 9.14 | High Temperature Operation | 986 | ||||
| 9.14.1 | On-State Characteristics | 986 | ||||
| 9.14.2 | Latch-Up Characteristics | 989 | ||||
| 9.15 | Lifetime Control Techniques | 991 | ||||
| 9.15.1 | Electron Irradiation | 991 | ||||
| 9.15.2 | Neutron Irradiation | 993 | ||||
| 9.15.3 | Helium Irradiation | 993 | ||||
| 9.16 | Cell Optimization | 994 | ||||
| 9.16.1 | Planar-Gate Structure | 995 | ||||
| 9.16.2 | Trench-Gate Structure | 999 | ||||
| 9.17 | Reverse Conducting Structure | 1006 | ||||
| 9.18 | Summary | 1014 | ||||
| Problems | 1015 | |||||
| References | 1020 | |||||
| Chapter 10 Synopsis | 1027 | |||||
| 10.1 | Typical H-Bridge Topology | 1027 | ||||
| 10.2 | Power Loss Analysis | 1029 | ||||
| 10.3 | Low DC Bus Voltage Applications | 1032 | ||||
| 10.4 | Medium DC Bus Voltage Applications | 1037 | ||||
| 10.5 | High DC Bus Voltage Applications | 1041 | ||||
| 10.6 | Summary | 1045 | ||||
| Problems | 1045 | |||||
| References | 1047 | |||||
| Author's Biography | 1049 | |||||
| Index | 1053 | |||||
Index
AAbrupt junction, 14, 95, 96, 104, 107, 383, 408, 796
Acceptors, 26, 29, 35, 37, 38, 44, 54, 78, 105, 205, 290, 303, 305, 387, 520, 525, 552, 710, 786, 882, 891
Accumulation conditions, 302-303
Accumulation layer, 44, 50, 307, 315, 332, 333, 335, 336, 340, 345, 351, 353, 355-356, 362, 363, 367, 386, 777, 778, 792, 793, 814, 815, 916-918, 970-972, 980, 995, 1000
Accumulation layer channel, 481, 482
Accumulation layer mobility, 343, 370, 488, 489
Accumulation mode MOSFET (ACCUFET), 31, 482-488
Accumulation resistance, 332-333, 362-363
Acoustic phonon scattering, 35, 38
AC-supply, 728
AC-supply voltage, 728
Activation, 449, 922
Active area, 146, 197, 327, 427-430, 432, 434, 435, 460, 462, 463, 509, 646, 647, 657, 663, 667, 959, 983
Adjustable speed motor drive, 740
Air-conditioning, 740, 856, 1040, 1050
Alignment tolerance, 348
Alpha, 34, 93, 512, 515
Alpha-T, 156, 515, 535, 542, 633, 750, 762, 766, 833, 845
Aluminum, 51, 52, 76, 83, 138, 145, 320, 389, 399, 462, 465, 498, 608, 609, 628, 654
Ambient temperature, 39, 181, 190, 192, 194, 449, 456, 518, 608, 615, 636, 641, 648, 650, 752, 766, 928, 986, 988
Ambipolar diffusion- coefficient, 42, 246
- length, 212, 220, 654, 778, 784, 817, 829, 835
Amplifying gate, 672-675, 686, 687, 690-697, 734
Annealing, 59, 77-78, 151, 196, 453, 991
Anode, 9, 10, 12-14, 138-140, 142, 144, 145, 159, 160, 168, 210, 211, 218, 220, 236, 244, 245, 253-255, 258, 628-735
Anode short, 698, 700, 703
Anti-parallel diode, 617, 618, 746, 1006
Appliance controls, 732, 913, 991
Applications, 1, 2, 8-12, 23, 43, 55, 58, 76, 91, 92, 96, 132, 133, 167, 169, 176, 192, 203-204, 236, 279-280, 300, 326, 375, 381, 427, 433-434, 447, 459, 468, 499, 507-508, 575, 616, 618, 625, 628, 631, 675, 698, 726, 738-743, 769, 907, 913, 981, 986, 1027, 1036, 1040, 1044
Arsenic, 51
Asymmetric blocking, 739, 740, 1000, 1006, 1009
Asymmetric structure, 700, 743, 760-775, 796-808, 834-853, 874, 893, 909-912, 970, 972, 976, 977, 993, 1001, 1002, 1004
Atomic lattice layout (ALL), 299, 300, 355357, 501, 943, 947-948, 960, 995, 1019
Audio amplifiers, 2, 375, 377
Auger recombination, 59, 60, 80-82, 219-220, 222, 225, 226, 544-546, 620, 733, 734
Automotive electronics, 2, 3, 427, 456, 1051
Avalanche breakdown, 55, 91-95, 99, 100, 102, 106, 110, 117, 131, 135, 157, 158, 292, 311, 449, 451, 612-614, 629, 630, 632-634, 638, 639, 749, 751, 753, 761, 764, 765, 767, 953, 956
BBaliga Pair configuration, 465-475, 490
Baliga's figure of merit, 15, 22, 34, 100, 428-431, 433, 465
Baliga's power law, 93, 97
Ballast resistance, 610, 611
Band gap, 15, 23-30, 35, 58-61, 63, 65, 67, 69, 72, 76, 78, 162, 196, 230, 273, 274, 302, 468, 479, 480, 483, 499, 680, 763, 991, 994
Band gap narrowing, 26-30, 84, 218-220, 222, 225, 226, 525, 526, 544-546, 620, 733, 734
Band offset, 480
Band tails, 27, 30
Barrier height, 82, 83, 174, 175, 178, 180, 182-184, 186, 192-197, 302, 330, 361, 469
Base current, 7, 450, 451, 509-513, 520, 526, 530, 544, 551, 554-557, 561, 564, 569, 570, 572, 573, 575, 578, 584, 588, 590, 591, 594, 596, 597, 599, 609, 653, 658, 865, 920
Base resistance, 12, 369, 446, 451, 452, 516, 517, 551, 554, 557, 578, 581, 584, 586, 599, 947
Base resistance controlled thyristor (BRT), 12-14
Base transit time, 575, 663, 664, 670
Base transport factor, 156, 450, 515, 521, 533, 536, 540, 560, 633, 636, 638, 639, 641, 703, 750, 752, 754, 762, 763, 765-767, 769, 770, 774, 817, 823, 828, 830, 831, 833, 834, 839-841, 845, 848-850, 854, 866, 923
Base widening, 522, 536-550
Beta, 511, 547, 548
Bevel
- angle, 139, 141-148, 161, 162
- edge termination, 137-149, 161
Bipolar current by-pass, 936-939
Bipolar power devices, 8, 10-14, 30, 35, 42, 43, 63, 64, 67, 70, 76-78, 84, 737, 808, 991, 1029
Bipolar second breakdown, 449-451
Bipolar transistor, 7, 10, 11, 155, 156, 162, 279, 284, 291-293, 316, 329, 341, 359, 369, 446, 449, 450, 507-619, 627-630, 633, 638, 642-645
Blocking characteristics, 476-478, 490-491, 513-520, 631-651, 748-775, 1002
Blocking gain, 467, 469
Blocking voltage, 7, 8, 10, 14, 55, 104, 171, 173, 187, 203, 226, 232, 281, 289-300, 337, 347, 348, 364, 372, 434, 448, 453, 459, 477, 479, 499, 507-508, 513-517, 526, 628-629, 632, 636-637, 641, 685, 691, 729, 739, 743, 746, 749-754, 760-761, 766, 907, 981-984
Blocking voltage scaling, 980-986
Body diode, 288, 289, 408
Boltzmann relationship, 249, 569
Boltzmann's constant, 25, 42, 61, 172, 205, 478
Boron, 10, 51-53, 58, 76, 83, 138, 315, 460, 461, 463, 628, 744, 916, 929, 930, 979
Breakdown voltage, 7, 15, 16, 19, 32, 34, 52, 54, 55, 69, 74, 78, 84, 91-163, 167, 174-176, 179-180, 184, 197-198, 217, 230, 281, 284, 289-300, 328, 447-450, 467, 477, 489, 499, 629, 633-640, 691, 693, 698-699, 723-725, 745, 750, 754, 761, 768, 832, 847, 953, 959-960, 967
Buffer layer, 262-263, 614, 796-798, 801-803, 842-844, 869, 875, 876, 894, 895, 970, 1001
Built-in potential, 24, 30, 31, 84, 85, 171, 188, 334, 395, 403, 446, 447, 449, 454, 484, 485, 487, 510, 517, 575, 609, 655, 656, 659, 662, 675-677, 696, 729, 731, 916, 923, 924, 946-948, 962, 974, 975, 989
Built-in voltage, 31, 187, 188
Bulk mobility, 20, 37, 48, 50, 334, 458
Bulk potential, 308, 310-312
Bullet train, 1041, 1050
Buried channel, 483
Buried gate, 483
CCapacitance, 187, 188, 280, 283, 312, 331, 332, 350, 353, 355, 361, 363, 378, 385-409, 411, 427, 430, 434-446, 676, 695, 781, 958
Capacitive turn-on, 444-445
Capture cross-section, 55, 62, 63, 68, 69, 71-73, 78, 79, 273
Capture cross-section ratio, 67, 68, 71, 73
Carrier distribution, 204, 207, 209, 211, 213, 223, 225, 226, 236, 237, 243, 245, 246, 249, 256, 259, 262, 264, 265, 267, 269, 508, 522, 524, 529, 534, 567-571, 573, 579, 583, 584, 653, 661, 671, 683-685, 706, 708, 710, 711, 713, 718-720, 778, 783, 784, 789, 791, 792, 796, 800, 803, 808-810, 820-822, 829, 830, 834, 835, 839, 843, 849, 858, 859, 865, 881, 882, 886, 890, 895, 899, 902, 919, 969-971, 999, 1011
Carrier mobility, 24, 34-50, 305, 324, 523
Cascode configuration, 475
Catastrophic breakdown, 480
Catenary, 211, 223, 245, 653, 661, 683, 720, 777, 783, 789, 970, 999
Cathode, 9, 10, 12-14, 17, 20, 120, 121, 126, 138-140, 144, 145, 159, 160, 168, 173, 177, 210, 211, 215, 218-220, 226, 242, 256, 262, 266, 628-735
Cathode short, 641, 642, 644, 646, 647, 650, 655-657, 659, 663, 670, 673, 674, 676, 677, 681-683, 686-688, 692-696, 698, 703, 712, 728-730, 733
Cathode shorting geometry, 644-651, 658, 675, 676, 694-695
Cell design, 282, 298, 299, 328, 427, 432, 498, 725-726, 960, 982, 995, 997-999, 1005
Cell layout, 298
Cell optimization, 994-1006
Cell pitch, 17, 20, 293, 295, 331, 337, 340, 344, 348, 351, 352, 355, 358, 361, 363, 365, 366, 369-371, 373, 374, 376, 381-385, 390, 392-397, 400, 401, 403-406, 414-423, 425-429, 432, 433, 456, 459, 475, 482, 485, 492, 494, 497, 498, 779, 780, 793, 804, 807, 815, 918, 924, 971, 972, 977, 980, 984, 988, 991, 1000-1004
Cell topology, 293, 298, 299, 350-357, 500, 501, 943-948, 959, 960, 995
Cellular communication, 2
Channel density, 50, 284, 332, 362, 369, 375, 491, 492, 498, 937, 950, 966, 976, 977, 1005, 1006
Channel length, 10, 279, 280, 289, 291, 293, 297, 315, 316, 320, 322, 326, 329, 331, 332, 341, 342, 350, 351, 353, 361, 362, 367, 369, 370, 376, 377, 379, 381, 383-385, 395, 456, 477, 479, 482, 492-494, 497, 744, 745, 758, 780, 793, 815, 825, 851, 917, 934, 937, 972, 995, 1033
Channel mobility, 381, 453, 457, 493, 497, 498, 780, 965
Channel pinch-off, 8, 323, 326, 375, 377, 381, 385, 411, 437, 781
Channel resistance, 45, 292-293, 300, 321-327, 331-332, 347, 350, 353, 355, 361-362, 381, 482, 492, 494, 778, 781, 914, 915, 931, 934
Charge balance, 140
Charge control analysis, 589, 592, 594
Charge coupled Schottky rectifier, 21
Charge coupled structures, 16-21
Charge-coupling, 15-18, 20, 167, 379, 499
Charge extraction, 409-417
Charge optimization, 16, 131
Chemical vapor deposition, 162
Chynoweth's law, 32, 93, 97
Circular co-ordinates, 116
Circular window, 299, 943, 945-946
Clamping diode, 709, 876
CMOS technology, 460
Collector, 10, 11, 156, 508, 509, 511-522, 524-528, 530-534, 536-544, 559-562, 565-570, 575, 585, 589, 593, 607, 612, 616, 630, 638, 665, 701-702
Collector efficiency, 521, 522
Collector short, 1006-1014
Common base, 511-513, 515, 521, 522, 526, 535, 540, 542, 613, 633, 638, 639, 643, 644, 654, 657, 702, 703, 709, 750, 762, 841, 923, 926, 934
Common emitter, 510, 565, 574
Common emitter current gain, 156, 511-513, 516, 518, 526, 531, 532, 535, 536, 540, 542, 616, 617
Compact fluorescent lamp, 988, 1050
Compensation, 74, 105, 290, 383, 446, 537, 745, 929, 930
Complementary devices, 281, 457-459, 915, 920
Complementary structure, 913-920
Composite bevel termination, 159
Computer power supply, 91
Conduction band, 24, 35, 40, 59-61, 64, 74, 80, 92, 170, 480, 481
Conduction loss, 7, 146, 192, 473, 647
Conductivity modulated region, 240, 571, 671, 820, 830, 836, 839, 861, 862, 869, 878, 887, 896
Conductivity modulation, 71, 104, 209, 213, 226, 227, 230-232, 236, 262, 566, 568, 574, 651, 765-766, 802, 803, 805, 857, 858, 914, 918-919, 970, 1009
Conformai oxide, 490
Contact potential, 170
Contact resistance, 83, 329-330, 339, 344, 350, 359-361, 365, 462, 465, 489
Continuity equation, 41, 209, 236-237, 263, 523, 524, 710, 784, 800, 822, 829-830, 835, 837, 858, 881
Control circuit, 245, 437, 440, 441, 444, 445, 453, 507, 511, 512, 517, 520, 533, 563, 619, 625, 683, 727, 745, 1006, 1027
Control-FET, 443, 444
Conversion efficiency, 430
Coulombic scattering, 37, 44-46, 523
Critical electric field, 14-18, 20, 34, 99, 100, 102, 105, 111-112, 114, 118, 119, 122, 150, 156, 168, 185, 281, 476, 477, 479, 482, 633, 637, 749, 753, 754, 761, 767
Critical temperature, 962, 963
Current constriction, 593
Current crowding, 508, 510, 532, 543, 545, 546, 550, 551, 553-555, 557-559, 572, 580, 589, 604, 612, 613, 615, 619, 947
Current crowding parameter, 553, 554, 557, 580
Current distribution, 228, 336, 338, 348, 469, 550, 552, 554, 555, 557, 559, 582, 583, 587, 588, 610, 612, 627, 643, 670, 682, 799, 808, 938, 939, 942-947, 977, 988
Current fall-time, 593-598, 606, 709-721, 885, 887, 894, 896, 902, 991, 993
Current filaments, 26, 456, 607-609
Current flow-lines, 976
Current flow pattern, 328, 335, 343, 348, 350, 352, 354, 357, 359, 363, 367, 370, 489, 492, 676, 976
Current gain, 145, 156, 157, 291, 507, 509-513, 515-518, 520-550, 557, 560, 563, 568, 571, 613-614, 616-618, 633, 638, 642, 644, 653, 657, 700, 703
Current handling capability, 2, 279-280, 282, 327, 615, 626, 647, 733, 740, 741, 988
Current induced base, 539-544, 548-550, 612
Current partition, 943
Current ramp rate, 236, 240, 242, 245, 251, 254, 256-258, 260, 262, 266, 269, 683, 701, 705, 706, 713, 858, 860-864
Current rating, 3, 137, 626, 627, 739-741, 907, 910, 911
Current saturation, 12-14, 287, 326, 377, 378, 381, 467-468, 471, 815-856, 922, 937, 948, 950, 952, 953, 956, 976, 1014
Current saturation mode, 467-468, 815-856, 950, 952, 953, 956
Current spreading, 332, 333, 335, 337, 363, 367, 370, 492, 667, 670, 671
Current tail, 701, 709, 711, 712, 719-722, 747, 865-868, 877, 878, 882, 883, 891
Cylindrical co-ordinates, 109, 657, 674
Cylindrical junction, 109-119, 122-136, 150-152, 198, 293, 299, 300, 724, 725, 960
Czochralski (CZ) silicon, 55
DDamage, 50, 58, 59, 76, 77, 107, 142, 162, 196, 453, 991, 992, 994
Darlington configuration, 616-619
DC-bus, 1006, 1034-1036, 1039-1041, 1043-1045
DC-bus voltage, 459, 1027, 1029, 1032-1045
DC-source voltage, 443
DC-supply voltage, 5, 701, 961, 1029
Dead zone, 647, 670
Debye length, 306, 308
Deep levels, 58-60, 62, 63, 67, 74, 76-80, 162, 196, 273, 453, 991, 994
Deep level transient spectroscopy (DLTS), 62-63, 994
Deep P-region, 296, 372, 373, 433, 446, 447, 744, 748, 751, 753, 756, 760, 761, 764, 767, 772, 784, 789, 793, 795, 797, 801, 802, 811, 812, 817, 825, 835, 842, 852, 922-926, 928, 934, 935, 937, 944-953, 955-958, 995
Deep trench structure, 459, 1000-1006
Defects, 33, 54, 76-78, 82, 162, 461, 464, 991, 993
Degradation factor, 46, 113, 134, 281, 298, 453, 536, 650, 924, 944, 1002
Delay time, 437, 441, 584, 663, 670, 686
Density of states, 24-27, 61
Depletion, 14, 16, 32, 66, 91, 119-121, 128, 144, 160, 244, 293, 303, 304, 306-308, 342, 387, 491, 754, 767, 769
Depletion conditions, 303-304, 390, 400, 401
Depletion region, 16, 65, 66, 91, 92, 94-97, 101, 105-107, 109, 110, 113, 116, 117, 120, 121, 125, 132, 133, 139, 141, 144-145, 156, 159, 161, 168, 171-172, 180-182, 187, 203-207, 233-234, 245, 280, 292, 310-311, 381, 388, 395, 401, 477, 482, 509, 511, 515-516, 521, 537-538, 561, 592, 633, 637-638, 664, 686, 689, 692, 733, 746, 750, 761-762, 769, 771
Depletion width, 14, 15, 31, 98-100, 106, 107, 110, 112, 116, 117, 119-121, 124, 130, 131, 140, 141, 144, 145, 150, 156, 265, 290, 292, 310, 311, 333, 334, 339, 344, 477, 479, 488, 492, 494, 541, 768-770, 792, 814, 916, 958
Deposited oxide, 463, 490, 498
Design rules, 280, 282, 330, 332-334, 336, 337, 339, 340, 348-350, 360, 368, 446, 460
Destructive failure, 11, 26, 181, 189, 279, 444, 445, 447, 449, 453, 454, 456, 517, 607-609, 611, 615, 671, 675, 691, 692, 695, 725, 920, 922, 951, 952, 957, 961, 962
dI/dt capability, 672, 686-687, 690
Die layout, 559
Dielectric, 137, 301, 324, 348, 389, 400, 434, 435, 461, 462, 464, 494
Dielectric constant, 16, 24, 83, 96, 133, 187, 281, 378, 480
Dielectric relaxation time, 385-386
Diffusion, 41, 52, 54, 65, 76-78, 81, 108, 109, 116, 117, 119-121, 134, 137-138, 197, 204, 206-208, 222, 234, 236-237, 246, 263, 265, 273, 285, 293, 348, 383, 460, 527, 628, 632, 636, 654, 664, 667, 689, 732
Diffusion coefficients, 42, 52, 81, 138, 196, 207, 209, 218, 246, 523-525, 535, 547, 628, 711, 762, 763, 799, 812
Diffusion current, 65, 180, 204, 206, 207, 233-235, 274, 527, 636, 786
Diffusion equation, 237, 533, 667, 858, 962
Diffusion length, 65, 81, 156, 208, 212, 216, 218-220, 226, 234, 238, 523, 524, 526, 527, 530, 533, 535, 536, 543, 595, 639, 654, 711, 751, 755, 756, 762-764, 770, 778, 784, 788, 796, 799, 809, 817, 829, 835, 841, 859, 882, 891, 963
Discharge lamps, 857
Disk drives, 1027
Displacement current, 445, 446, 675-677, 682, 695-697, 957, 958
Display drives, 2, 3
Dissociation, 77, 78
Di-vacancy, 76
Diverter, 12, 13, 940-943, 949-951, 964, 965, 979
Diverter structure, 939-943
D-MOSFET, 9-10, 31, 279, 280, 284-286, 289, 292-296, 299, 315, 318, 327-358, 371, 389-395, 414, 418, 421, 423, 426-434, 461
Donors, 26, 27, 29, 35, 37, 53, 56, 74, 78, 96, 105, 129, 238, 250, 289, 290, 305, 523, 537, 538, 549, 685, 707, 859, 891, 953, 956, 994
Dopant compensation, 290, 383
Dopant ionization energy, 31
Dopant solubility, 628-629
Doping, 10, 20, 27, 37-38, 42, 45-48, 55-56, 58, 72, 73, 78, 81, 83, 104, 105, 107, 137, 142, 145, 151, 168, 179, 183, 195, 196, 215, 218-220, 227, 274, 627-629, 634-641, 691-692, 700
Doping concentration, 7, 14-20, 26, 27, 29-32, 34-38, 40, 47, 48, 52-54, 58, 63-65, 67-75, 82, 98-105, 112-113, 119-120, 144, 150, 158, 188, 196, 203, 207-209, 217, 220-221, 236, 262-263, 281, 285, 290, 311, 329, 334, 414, 477-479, 508-509, 514, 516, 523, 526, 528-529, 538-540, 554, 557, 563, 572, 590, 615, 627, 629, 632, 634, 641, 691, 700, 743, 746, 752, 766, 793, 924, 930, 933
Doping profile, 52, 105, 137, 142, 145, 151, 195, 196, 218-220, 236, 280, 290-292, 297, 313, 331, 334, 383, 509, 518-520, 628, 637, 743-744
Dose, 57, 77, 149-154, 195-197, 453, 498, 745, 929, 992, 993
Double-diffusion, 279, 283
Double-positive bevel, 159-162
Drain-source capacitance, 9, 321-323, 328, 329, 336, 338, 359, 368
DRAMs. See Dynamic Random access memorys
Drift region, 7-20, 23, 36, 40, 41, 54, 55, 60, 64, 67, 70, 72-75, 80, 96, 98-104, 120, 167-168, 173-175, 188, 196, 204-205, 208, 212-215, 222, 230, 236-242, 251, 262-263, 281, 285-286, 303, 332, 335-339, 347, 352, 357, 362-364, 378-379, 455, 459, 508, 516, 537-541, 566, 568-572, 585, 589, 615, 629-630, 632-642, 662, 664, 743, 751, 858-861, 982
Drift region conductivity, 70, 209, 213, 226, 230, 232, 236, 240, 274, 566, 568, 738, 858, 861, 914
Drift region resistance, 9, 10, 15, 176, 239-241, 287, 293, 300, 333, 335-339, 347, 363-365, 368, 369, 494, 565, 566, 573, 575, 861, 982
Drive circuit, 7, 279, 409, 436, 466, 490, 510-513, 588, 592, 593, 610, 692, 703, 704, 728, 737, 738, 914
Drive-in cycle, 460, 463
Drive transistor, 510, 511, 617
Dry oxidation, 47
Duty cycle, 4, 168, 189-192, 427, 428, 440, 443, 449, 675, 721, 722, 1032, 1037, 1041
dV/dt capability, 443-447, 675-682, 686, 691, 695, 697, 703, 728, 731-733
Dynamic Random access memory (DRAM), 280, 285, 460
EEarly effect, 619, 733, 737
Early voltage, 562, 565
Edge, 10, 26, 27, 57, 64-69, 72, 91, 92, 94, 96, 106-162, 180, 197-198, 281, 289, 296, 321, 332, 348, 359, 461, 509, 552-554, 559, 580, 590, 592, 611, 614
Edge termination, 52, 92, 93, 107-155, 159162, 179, 197-198, 281, 289-300, 345, 347, 348, 372, 460, 462, 498, 514, 559, 615, 691, 951, 954, 956, 1003, 1006
Effective base width, 536, 539, 540, 572
Effective intrinsic concentration, 302, 479, 609
Effective lifetime, 205, 900
Effective mass, 49, 83
Effective mobility, 35, 45-50
Effective oxide charge, 46, 48, 319
Einstein relationship, 42, 81, 209, 210, 569
Electrical field enhancement, 92, 108, 162, 281, 296, 488, 694, 960, 968, 1002, 1003
Electric car, 2, 1037, 1050
Electric field, 14-18, 20, 24, 28, 32-35, 38-41, 43-50, 65, 91-94, 96-100, 102, 105-112, 116-122, 131-133, 138-148, 150, 159, 161, 169, 182-186, 196-198, 207, 211, 213, 230, 245, 250, 282, 286, 290, 305-307, 309, 317, 372-373, 378-379, 391, 463, 465, 477, 479-480, 484, 522, 537-541, 612, 614-615, 632, 637, 664, 692, 700, 749, 753, 760, 792, 820, 836, 840, 878, 887, 959, 967
Electric field crowding, 298, 300, 959
Electric field profile, 115, 116, 127, 143, 144, 147, 148, 152-156, 161, 168, 195, 196, 297, 298, 391, 483, 484, 496, 514, 519, 537-541, 543, 544, 548-550, 569, 612, 651, 699, 700, 759, 760, 775, 820, 827, 844, 853, 870, 876, 880, 883, 886, 889, 892, 895, 898, 900, 903, 953, 956
Electric locomotive, 626, 698, 733, 739, 981, 1027, 1041
Electric train, 2, 3
Electromagnetic interference (EMI), 732, 913
Electron affinity, 24, 169-170, 194, 302
Electron beam induced current (EBIC), 33
Electron current, 237, 524, 525, 530, 533, 534, 569, 653, 746, 786, 787, 791, 809, 810, 816, 817, 821, 822, 827, 829, 830, 835, 837, 843, 844, 849, 858, 865, 953, 957, 1007
Electronic ballast, 986
Electron injection, 480, 655, 730
Electron irradiation, 23, 77-80, 273, 274, 453, 733, 985, 991-994
Electron mobility, 38, 239, 377, 535, 861
Electron trapping, 481
Emitter, 10-13, 156, 291, 446, 447, 449-451, 454, 508-520, 525, 530, 551-553, 555-557, 560, 589, 592-595, 610-612, 614, 618, 738, 748, 808, 853, 900, 906, 921, 937, 944, 1006
Emitter ballast, 610, 611
Emitter ballast resistance, 610-611
Emitter current crowding, 508, 532, 543, 545, 546, 550-559, 589, 604, 619
Emitter geometry, 559
Emitter injection efficiency, 156, 515, 521-533, 554, 557, 762, 766, 817, 831, 841, 854-856
Emitter switched thyristor, 13
End regions, 30, 81, 102, 205, 212, 215, 217-222, 225, 233-235
Energy band gap, 24, 25, 27, 29, 30, 59, 63, 72, 78, 230, 302, 483-484
Energy band offsets, 480
Energy loss per cycle, 904-909, 911-913, 919, 920, 974, 994
Environmental pollution, 1050
Epitaxial growth, 801, 913, 1006
Epitaxial layer, 284, 342, 367, 370, 460, 462, 498, 509
Equivalent circuit, 9, 408-409, 445, 450, 452-454, 630, 642, 674, 738, 748, 776, 777, 783, 816, 914, 915
Etch termination, 148-149
Europe, 739, 740, 980
Excess concentration, 264
Experimental results, 498
Exponential decay, 207, 266, 442, 523, 689, 710, 799, 872, 882, 891
Extension, 10, 16, 106, 107, 121, 129, 132, 134, 145, 149-153, 159, 160, 197, 256, 258, 263, 285, 298, 341, 376, 381, 383, 394, 395, 446, 471, 516, 520, 572, 592, 672, 693, 763, 767, 896, 922, 924, 1002, 1051
Extension length, 10, 376, 381, 924
Extrinsic resistivity, 51-54
FFabrication, 12, 20, 46, 51, 52, 54, 76, 77, 107, 130, 138, 148, 149, 220, 320, 329, 331, 359, 361, 365, 434, 461, 462, 464, 465, 498, 507, 611, 647, 967, 1003, 1014, 1050
Fabrication process, 461-464, 476, 496, 974, 980
Fall-time, 595
Fast neutrons, 58-59
Fermi level, 61, 64, 169, 170, 301-304, 307, 308, 763
Fiber optic cable, 686
Field oxide, 130-137, 197, 320-321, 460, 462
Field plate, 113, 132-137, 197, 289, 293, 294, 298, 960
Field plate length, 135, 136
Field stop layer, 743
Figure of merit, 15, 34, 100, 428-431, 433, 465, 499
First quadrant, 6, 159, 167, 287, 288, 453, 513, 625, 630, 632, 675, 729, 743, 748, 920
Fixed oxide charge, 44, 46, 48, 49, 128, 129, 151, 154, 155, 317-319, 485
Flat-band conditions, 301-302, 307
Floating electrode, 470
Floating field rings, 113, 120-132, 137, 151, 289, 298, 460, 462, 509
Float zone silicon, 55
Flow-lines, 938, 939, 942, 976
Fluorescent lamps, 2
Fly-back diode, 453, 465, 468-475, 510, 593, 594, 607, 768, 904, 907, 924, 1006, 1027-1029, 1032, 1036, 1037, 1040, 1041, 1043, 1044
Forward active region, 565, 608
Forward biased safe-operating-area, 608, 952-956
Forward blocking, 139, 145, 147, 476, 479, 482, 490, 625, 629, 630, 632, 636-641, 644, 646, 649-652, 654, 656, 657, 659, 662, 663, 676, 691, 699, 700, 703, 706, 727-730, 739, 743, 745, 746, 748, 749, 751-754, 758-761, 765, 766, 769, 770, 772-775, 796, 820, 836, 887, 967, 968, 973, 1002, 1003, 1006, 1009, 1010
Forward breakover protection, 691
Forward characteristics, 175, 176, 178, 232, 235
Forward conduction, 6, 171-179, 192, 221-229, 231, 232, 300-327, 467, 491-498, 651-653, 659-661, 776, 782, 783
Forward recovery, 239-243, 252, 857-865
Forward voltage drop, 43, 173, 175-177, 192, 193, 222, 223, 236, 241-244, 274, 556, 780, 858, 863, 864, 873
Forward voltage over-shoot, 237, 242-244, 858, 864
Fowler-Nordheim tunneling, 481
Free-wheeling diode, 436
Fulop's power law, 92-93, 97
Fundamental properties, 23-50
GGain, 7, 12, 53, 54, 92, 94, 95, 113, 125, 126, 134, 142, 145, 147, 151, 155, 156, 291, 467, 507, 511-513, 515, 521, 526, 532, 553, 613, 616, 737, 746, 755, 818
Gain fall-off, 532, 545
Gallium, 15, 23, 51, 52, 138, 172, 193, 628, 654, 1049, 1050
Gallium arsenide, 15, 23, 172, 193, 1049, 1050
Gallium nitride, 15
Gamma, 58, 76, 77
Gate charge, 409-426, 432, 468, 499
Gate design, 469, 671-672, 686-687, 690-691, 1014
Gate dielectric, 324
Gate-drain capacitance, 363, 392, 393, 397, 401, 402, 405-406, 409-414, 418, 419, 433, 437, 439-443, 445
Gate-drain charge, 409, 413, 415, 418, 419, 424-426, 432
Gate insulator, 280
Gate optimization, 285, 343-345, 458, 995-997
Gate oxide, 43, 282-286, 296, 298, 309, 316-320, 331, 332, 350, 353, 355, 361, 377, 378, 386-388, 390-394, 461, 463-465, 480-484, 490, 744, 930-936
Gate oxide thickness, 312, 313, 326, 332, 342, 343, 351, 353, 355, 356, 362, 363, 367, 374, 378-381, 384, 392, 395, 396, 401, 403, 404, 416, 418, 419, 421-423, 425, 433, 435, 455, 456, 459, 478, 484, 485, 493, 494, 496, 498, 780, 804, 807, 815, 825, 851, 931-937, 949, 950, 968, 972
Gate propagation delay, 434-435
Gate shape, 296-298
Gate-source capacitance, 411, 442, 444
Gate spacing, 8, 469
Gate switching charge, 413, 415
Gate total charge, 306
Gate triggering, 631, 680, 726, 728-732
Gate triggering current, 654-657, 675, 686
Gate turn-off thyristor (GTO), 10, 51-55, 77, 467, 468, 625, 627, 698-726, 733, 741, 1009, 1014, 1041
Gate voltage plateau, 411, 415-419, 421, 423, 439-442, 472
Gaussian distribution, 44, 667
Gaussian profile, 45, 793, 812, 916
Gauss's Law, 306, 391, 480
Generation current, 26, 65
Gold, 76-80, 273, 274, 453
Graded doping profile, 52, 137, 145, 290-291, 297, 334, 383, 408, 572, 628, 636, 787
Gradual channel approximation, 324
Grit blasting, 142, 160
Guard ring, 197, 198
HH-bridge, 475, 617, 768, 1027-1029
Heat sink, 142, 190, 429, 473, 962, 983
Helium radiation, 993-994
Heterojunction gate, 686, 689, 690
Hexagonal array, 299, 647, 943, 945-946
Hexagonal cell, 352-357
Hexagonal window, 299, 350, 352-355, 943
High frequency operation, 426-435, 680
High-level injection, 42, 70-75, 81, 82, 203, 204, 208-217, 219, 221-223, 237, 240, 242, 248, 274, 507, 522, 526, 528-533, 551, 555-557, 559, 568, 571, 573, 574, 589, 591, 592, 619, 651, 653, 667, 668, 710, 746, 779, 784-788, 791, 792, 794, 796, 798, 800, 803, 805, 806, 810, 813, 817, 819, 822, 827, 830, 831, 837, 839, 843, 845, 859, 861, 863, 866, 878, 881, 916, 927, 969, 971, 981
High-level lifetime, 63, 70-73, 75, 79, 209, 211, 212, 252, 257, 680, 681, 704, 706, 708, 709, 711, 788, 789, 794-797, 801, 804-806, 808, 812, 883, 884, 906, 908, 917, 918, 934, 972, 973, 981, 982, 984, 988, 991, 995-997, 1000-1003
High temperature characteristics, 454-457
High temperature operation, 191, 926, 986-991
Holding current, 12, 652, 657-662
Hole current, 210, 234, 523, 525, 526, 530, 569, 731, 770, 785-787, 800, 810, 817, 822, 823, 825, 827, 830, 831, 837, 839, 843, 922-924, 944-948, 953, 956, 957, 974, 976, 977, 979
Hot electron injection, 480
Hot electron instability, 296
Hot spots, 228, 456, 607-609
HVDC transmission, 2, 3, 626, 733
Hybrid device, 737
Hybrid electric car, 2, 1037, 1050
IIdeal device characteristics, 5-8
Ideal drift region, 14-16, 335, 363
Ideal power rectifier, 6
Ideal specific on-resistance, 16-21, 100-101, 280-282, 285, 340, 344, 346-348, 371, 372, 494
Ideal transistor, 7
IGBT. See Insulated gate bipolar transistor
Ignition control, 857
Image force lowering, 181, 182
Impact ionization, 18, 33, 34, 92, 94, 97, 107, 110, 117, 155, 184, 185, 292, 377, 449, 516, 521, 641, 692, 723, 753, 828, 832, 846, 848, 853, 953, 954, 956, 967
Impact ionization coefficients, 24, 32-34, 92-95, 97, 100, 107, 111, 113, 114, 177, 184, 185, 636, 648, 650, 766, 953-954
Impurity band, 27
Induction heating, 2
Inductive load, 244, 279, 287, 348, 372, 436, 472, 575, 584-590, 598-607, 611, 700, 701, 709, 876-878, 883-887, 889, 892-896, 898, 901-905, 908, 910-912, 952, 956, 1003
Ingot, 56-59
Ingot rotation, 57, 58
Inhomogeneous contact, 55
Input capacitance, 283, 332, 386, 388-390, 395, 396, 400, 401, 404-106, 409, 421, 427, 430, 435, 443, 468, 781, 960
Input impedance, 279, 507, 738
Instability, 78, 162, 296, 480
Insulated gate bipolar transistor (IGBT), 1, 2, 7, 10-13, 43-44, 49-52, 54, 95, 137, 155, 156, 167, 176, 245, 312, 507, 626, 698, 737-1014, 1027-1046
Integral body diode, 452-454, 1032, 1034
Interdigitated, 282, 618
Interdigitated metal, 282, 618
Interelectrode capacitance, 389, 390, 400
Interelectrode oxide, 390, 400
Interface charge, 48, 317
Interface physics, 301-304
Intermetal dielectric, 434, 461, 462, 464
Intervalley scattering, 35, 38
Intrinsic carrier concentration, 24-26, 29-31, 42, 51, 205, 218, 219, 234, 455, 525, 526, 530, 547, 608, 609, 755, 986
Intrinsic resistivity, 51
Inversion conditions, 45, 47, 304-306, 309, 310, 312
Inversion layer channel, 286, 386, 481, 491, 498, 746
Inversion layer mobility, 45-49, 322, 324, 326, 331, 343, 350, 353, 355, 361, 367, 374, 377, 457, 458, 463, 465, 477, 494, 496, 497
Inversion region, 304, 310
Involute design, 672
Ion implantation, 52, 83, 107, 149, 151, 195, 196, 285, 315, 328, 446, 461, 476, 481, 490, 498, 744, 745, 793, 892, 913, 929, 930, 1006
Ion implant straggle, 994
Ionization integral, 95, 97, 100, 107, 111, 117, 118
Isotopes, 55-56
JJacobian function, 220
JFET region, 280, 284-286, 296, 332-337, 341-343, 348, 351-354, 356-358, 362, 363, 376, 382, 383, 390, 395, 414, 416, 419, 425, 433, 460, 481-483, 488-494, 496, 498, 742, 744, 745, 756, 772, 791-795, 803, 807, 814, 815, 916, 917, 937, 971, 996
JFET resistance, 333-335, 494, 966, 972, 979
JFET width, 485, 487, 488
Junction barrier controlled Schottky (JBS) rectifier, 187, 199
Junction capacitance, 402, 676, 677, 695, 697, 958
Junction curvature, 14, 113, 119, 129, 150, 293, 724, 725, 960
Junction depth, 52, 108, 110, 113-117, 119, 124, 125, 130, 133-136, 161, 292, 293, 297, 299, 318, 331-335, 337, 339, 351-354, 356, 357, 361-363, 390, 392, 395, 400, 492, 494, 498, 544, 628, 690, 693, 743, 793, 812, 917, 924, 925, 941, 945, 946, 948, 966, 975, 995, 1010
Junction field effect transistor (JFET), 9, 10, 280, 284-286, 296, 328, 332-337, 340-345, 348-357, 390, 467, 482-483, 490, 492, 745, 791, 793
Junction termination extension (JTE), 149-155, 298, 498
KKirchhoff's law, 156, 450
Kirk current density, 539, 540, 543, 612
Kirk effect, 524, 536, 545, 548, 549
LLaptops, 1052
Latch-up, 11, 12, 245, 687, 738, 743, 747, 920-931, 933-951, 953-955, 957, 962, 964, 967, 974-976, 978-980, 989-991, 998, 1014
Latch-up proof design, 948-950
Latch-up suppression, 920-951, 990
Lateral diffusion, 108, 109, 349, 744, 745
Lateral doping profile, 341, 376, 383, 395, 742, 744, 757, 758, 772
Lateral MOSFET, 321-323, 331, 343, 367, 437
Lattice damage, 58, 76, 77
Law of the junction, 205, 206, 215, 522, 529
Leakage current, 3, 5, 7, 21, 26, 65-67, 70, 72-74, 79, 107, 162, 167, 180-181, 183-187, 189, 190, 192-194, 196-199, 233-236, 274, 324, 475, 476, 514-516, 617, 633, 636, 638, 641, 642, 644-647, 650, 654, 659, 676, 750, 754-760, 762, 769-775, 1002, 1009, 1010, 1030, 1031
Level-shifting, 914
Lifetime, 23, 42, 58-82, 84, 157-158, 205, 212, 215, 233, 242, 254, 266, 270, 273, 387, 453, 527, 636, 642, 654, 681, 703-704, 712, 732-733, 741, 747, 766, 796-797, 808, 869, 915, 986
Lifetime control, 69, 75-80, 273-274, 453, 741, 798, 883, 892, 991, 994
Light activated thyristor, 685-691
Light triggering, 627
Linear cell, 299, 328, 344-347, 349-358, 371, 434, 944, 946-948, 960, 995
Linearized waveforms, 5, 410, 857
Linearly graded junction, 104-107
Linear region, 300, 377, 378, 471, 776, 777, 779
Liquid phase epitaxial growth, 801, 913, 1006
Lithography, 279, 315, 647
Load resistance, 409, 574, 581, 669, 670, 682, 871-873
Locomotive drives, 1, 1041
Low-level injection, 67-69, 204, 206, 207, 217, 218, 221, 222, 530, 551, 553, 554, 558, 559, 590, 592, 711, 770, 785, 786, 798-800, 805, 806, 838, 839, 843, 844, 866, 872, 882, 890, 891, 894
Low-level lifetime, 63-65, 67-73, 75, 79, 80, 755, 756, 763, 764, 892, 906
MMajority carrier concentration, 42, 205, 236, 238, 531, 571, 573, 579, 785, 858, 860
Majority carriers, 27, 29, 50, 168, 171, 239, 302, 304, 386, 652, 861
Masking, 108, 138, 148, 151, 315, 329, 348, 360, 373, 446, 460, 646
Material properties, 15, 23, 24
Matrix converter, 913
Maximum controllable current, 722
Maximum depletion width, 14, 98, 99, 290, 310-311
Maximum electric field, 14, 97, 102, 110, 116, 117, 126, 140, 141, 146, 148, 150, 156, 161, 179, 183, 185, 196, 477, 480, 487, 494, 496, 538, 541, 612, 632, 637, 638, 749, 750, 753, 761, 764, 765, 767
Maximum junction temperature, 327, 447-449, 454, 615
Maximum operating frequency, 445, 598, 679-681, 721, 722
Maximum temperature, 963, 966
Maximum turn-off current, 703, 722-726Maximum turn-off gain, 703, 723, 724
Mesa, 107, 297, 359, 360, 363, 368, 373, 400, 403, 407, 425, 426, 431, 493, 496, 724, 967, 975, 999, 1005
Mesa width, 360, 366, 368, 370, 373, 400-408, 424-426, 431, 432, 492-494, 968, 995, 1001-1004, 1006
MESFET, 465, 466, 469-471, 474, 475
MESFET on-resistance, 469, 471
Mesoplasmas, 26
Metal-semiconductor contact, 83, 167, 169-171, 176, 180, 181, 184, 195, 468, 1033, 1038
Metal semiconductor field effect transistors (MESFETs), 465, 466, 469-471, 474, 475
Microwave oven, 2
Miller capacitance, 409, 439, 472, 475
Minority carrier concentration, 67, 208, 218, 221, 522-526, 530, 534, 571, 608, 718, 791, 800, 809, 813
Minority carrier current, 172
Minority carrier lifetime, 59-63, 74, 77, 84, 104, 158, 159, 161, 205, 230, 234, 242, 243, 251, 253, 270, 535, 580, 654, 746, 753, 763, 766, 869, 872, 873
Minority carriers, 8, 11, 27, 29, 30, 41, 42, 66, 67, 70, 75, 80, 81, 101, 157, 177, 178, 198, 203, 204, 206-208, 213, 233, 236, 242, 243, 248, 251, 253, 270, 274, 283, 293, 385, 388, 508, 509, 511, 515, 517, 522-526, 529-531, 533-535, 560, 561, 566, 568, 569, 571, 573, 574, 580, 608, 636, 652, 654, 658, 663, 680, 718, 720, 746, 753, 755, 756, 758, 762-764, 766, 769, 770, 774, 784, 791, 799, 800, 808, 809, 813, 814, 829, 835, 858, 869, 872, 873, 894, 916
Moat, 148, 149
Mobile charge, 162, 304, 305, 309, 317, 387
Mobility, 15, 16, 18-20, 24, 34-50, 100, 209, 214, 219, 281, 301, 305, 322-327, 332, 350-357, 362, 447, 455-458, 463, 465, 489, 523, 525, 569, 764, 794, 861, 988
Molybdenum, 142, 724
Monolithic, 2, 91, 490, 616-618, 728, 729, 738
MOS-bipolar power devices, 11-14, 737
MOS capacitance, 386, 399
MOS controlled thyristor, 12
MOSFET, 1, 2, 7, 9-14, 31, 43-45, 49-52, 54, 95, 101, 104, 106, 107, 137, 155, 279-499, 1027-1046
MOS second breakdown, 451-452
Motor control, 169, 176, 203, 245, 574, 617, 746, 768, 804, 856, 857, 876, 904, 907, 1006, 1014, 1027, 1028, 1032, 1034-1037, 1039-1041, 1043, 1044
Motor current, 856, 1029
Motor drives, 3, 733, 740, 768, 1027, 1040, 1041, 1044, 1050
Motor windings, 1029
Multi-phonon recombination, 59
Multiplication, 156-158, 184, 185, 193, 199, 414, 451, 515, 521, 522, 633, 634, 636-638, 641, 749-754, 761, 762, 764, 765, 769, 817, 824, 828, 832-834, 845, 847-850, 853, 953, 956, 958, 964
Multiplication coefficient, 94-95, 156, 185, 451, 515, 633, 634, 636-638, 641, 749-753, 761, 765, 817, 834, 847, 848
NN-base width, 157, 158, 161, 666, 668, 704, 706, 708, 711, 712, 780, 788, 793, 796, 812, 815, 851, 972
N-buffer layer, 699, 700, 742, 743, 745, 746, 761-764, 766, 767, 769-772, 774-796, 802, 839, 994
n-channel, 13, 43, 49, 281, 300, 301, 304, 307, 312, 315, 316, 319, 321, 381, 385, 386, 408, 449, 452, 453, 457-459, 478, 494, 741, 816, 913-915, 917-922, 925, 926, 928, 930, 931, 935, 937, 941, 943, 948, 950, 953-956, 958, 959, 964, 966, 968, 970, 974, 978, 981, 991, 1006
Negative bevel, 138, 139, 144-148, 159, 161, 628, 629
Neutron flux, 56, 57, 59, 993
Neutron radiation, 57, 58, 993
Neutron transmutation doping, 23, 55-59, 626
Nickel, 340, 365, 462, 465
No-load, 865-867
Non-isothermal simulations, 964, 978
Non-punch-through, 265, 267, 272
Normalized breakdown voltage, 112-115, 119, 126, 152
Normally-off behavior, 465, 483, 484, 487
Normally-on behavior, 9, 465-467, 469, 483
Numerical simulations, 93, 109, 113, 125, 126, 129, 134, 136, 142, 147, 151, 152, 158, 161, 177, 222, 225, 228, 231, 232, 235, 236, 242, 243, 256, 266, 341, 366, 370, 376, 383, 395, 404, 416, 419, 422, 425, 468, 485, 494, 518, 544, 558, 563, 573, 580, 586, 599, 648, 659, 669, 681, 683, 693, 712, 756, 772, 782, 789, 794, 797, 802, 807, 812, 815, 820, 825, 832, 842, 847, 852, 855, 864, 867, 874, 884, 893, 901, 910, 918, 926, 930, 935, 937, 941, 950, 954, 964, 967, 971, 972, 976, 978, 988, 990, 1001, 1002, 1004, 1009
OOff-state, 3, 5-8, 67, 168, 178, 188, 189, 283, 386, 436, 437, 459, 574, 625, 703, 907, 912, 1030, 1031
Off-state power loss, 7, 189
Ohmic contact, 9, 17, 82-83, 168, 173, 174, 899
On-resistance, 8, 15-20, 31, 46, 99-101, 174, 177, 185, 280-282, 285, 291, 293, 296, 298, 300, 320, 327-371, 426-432, 448, 456, 458-460, 477, 488, 492, 738, 982, 988
On-state, 3-12, 14, 35, 42, 43, 55, 66-75, 77, 101-102, 119, 167-168, 172-176, 189-194, 203-205, 212, 215-222, 230, 236, 245, 270-274, 280, 409, 419, 427, 440, 443, 468, 508, 510, 543, 566, 571-572, 575, 611, 615, 617, 625, 627, 630-633, 645-647, 652-655, 657, 667, 676, 698, 701, 704, 729-733
On-state characteristics, 205, 221, 222, 224, 225, 228, 475, 565-574, 651-662, 741, 746, 776-815, 915-919, 934, 935, 982-989, 1008, 1010, 1011, 1013, 1014
On-state power loss, 5, 230, 280, 409, 422, 427, 443, 456, 907, 1029, 1038
On-state voltage drop, 5-9, 11, 12, 14, 21, 55, 70, 73, 82, 102, 104, 167, 172-179, 189, 192-194, 203, 209, 213, 215-217, 220, 236, 263, 270-274, 289, 414, 419, 440, 468, 516, 566, 570, 572, 580, 598, 610, 617, 625, 629-630, 633, 641, 647, 652-654, 667, 703, 721, 739, 747, 781, 791, 794, 803, 814, 858, 971, 983, 988, 992-996, 1002, 1009
Open-base breakdown voltage, 158, 291, 447, 449, 454, 514-518, 634-636, 639, 640, 745, 751, 752, 754, 766
Open-base transistor breakdown, 155-162, 629, 634, 638, 639, 750, 751, 754, 761, 762, 765, 951, 982
Open-emitter breakdown voltage, 447, 449, 454, 514, 516, 517, 519
Operating temperature, 168, 190-193, 986
Optical phonon scattering, 35, 38, 378
Optical triggering, 685
Optimization, 16, 66-68, 70-73, 91, 130, 131, 195, 219, 280, 285, 293, 340, 343, 344, 349, 350, 368, 426-435, 458, 498, 511, 634, 639, 741, 751, 765, 877, 907, 919-920, 943, 994-1006, 1014
Optimum charge, 16-18, 154
Optimum dose, 152, 154
Optimum spacing, 121-124, 126, 131, 488
Orthogonal, 138, 148, 322, 330, 331, 360, 368, 434, 482, 490, 491, 551, 555, 594, 645, 656, 658, 704, 779, 818, 923, 958, 974, 979, 1002, 1005, 1006
Output capacitance, 393-395, 397-399, 402-404, 406-409, 474
Output characteristics, 321, 326, 379-385, 471, 472, 508, 514, 544, 560-565, 573, 629, 700, 728, 745-748, 776, 820, 828-832, 834, 844-849, 853-856, 950, 953, 954, 976
Output resistance, 324, 381-385, 471, 544, 560, 563, 565, 832-834, 847-849, 855, 856
Output transistor, 616, 617, 619
Overshoot voltage, 242, 863
Oxide charge, 44, 46, 48, 49, 128-130, 132, 151, 154, 155, 317-320, 453, 485, 932
Oxide field, 132, 133, 479-481
Oxide passivation, 129
Oxide rupture, 459, 498
PParalleling devices, 988
Parallel-plane breakdown voltage, 52, 113, 125, 127, 134, 142, 179, 263, 281, 290, 293, 294, 297, 339, 345, 372, 485, 494, 828, 833, 846, 848, 853
Parallel-plane junction, 98, 100, 103, 107-110, 112, 115, 118-124, 126, 130, 131, 133, 142, 146, 147, 150-152, 154, 156, 161, 281, 290, 294
Parasitic bipolar transistor, 284, 291-293, 316, 369, 446, 449, 450, 453-454
Parasitic inductance, 436, 468
Parasitic resistance, 280, 281
Parasitic thyristor, 11, 733, 741, 743, 747, 748, 920-923, 926, 928, 931, 935, 937, 941, 946, 947, 950, 951, 957, 967, 974, 1014
Particle radiation, 76
Passivation, 129, 137, 138, 142, 147, 148, 151, 155, 159, 161, 162, 197, 462, 724
P-base doping, 455, 469, 477-479, 482, 526, 527, 547, 548, 553, 554, 557, 558, 563, 565, 661, 932-934
P-base resistance, 369, 446, 451, 517, 551, 947
p-channel, 12, 54, 281, 313, 315, 316, 320, 457-459, 913-920, 948, 953-955, 959, 960, 964, 1006
Peak reverse recovery current, 244, 251-255, 257, 260, 269, 270, 856, 1029, 1030, 1033, 1038, 1042
Period, 3-5, 189, 251, 253-256, 387, 416, 427, 432, 442, 443, 679-681, 713, 721, 886, 895, 902, 1031
Permittivity, 133
Phase control, 631, 677, 683, 726-728, 732
Phonon scattering, 35, 38, 44, 378
Phosphorus, 10, 51, 52, 55-59, 76, 83, 315, 339, 365, 461, 463, 793, 1006
Photoresist, 148, 329, 360, 461
Photoresist mask, 328, 460, 461, 463, 944, 946, 947
Pinch-off voltage, 325, 373, 383, 467
Pinch sheet resistance, 446, 924, 925, 929, 946, 948, 950, 974, 975
P-i-N/MOSFET model, 819
P-i-N rectifier, 8, 78, 101-104, 167, 203-275, 453, 630-631, 653-654, 684, 703, 741, 778, 784, 791, 819, 970, 1000, 1027-1046
Planar edge termination, 132
Planar gate, 10, 50, 296, 465, 467, 488, 498, 739-741, 966-975, 979, 980, 984, 988, 991, 994-1000, 1032
Planar junction, 108, 114, 120-138, 149, 150, 162, 293, 296, 298, 724
Planar junction termination, 108-120, 137
Planar MESFET, 465
Planar MOSFET, 478, 479, 482-484, 488, 489
Platinum, 76, 78-80, 194, 273, 453
P-N junction, 16, 17, 30-32, 65, 66, 91, 95, 114, 133, 135, 136, 139-141, 143-145, 147-149, 155, 159-162, 179, 197, 198, 203-207, 215, 218, 233, 234, 237-239, 243, 244, 246-250, 257, 282, 283, 290, 292-294, 296, 310, 311, 394, 453, 484, 485, 487, 488, 523, 527, 529, 549, 550, 609, 625, 629, 655, 656, 786, 798, 800, 860, 861, 864, 865, 923, 946, 947, 968, 974, 976, 983, 999, 1033, 1050
Poisson's equation, 14, 27, 96, 106, 109, 116, 196, 249, 305, 306, 536-538, 612, 707
Polysilicon, 10, 285, 293, 294, 299, 300, 314-316, 319-321, 328-330, 335, 341, 344, 345, 347-350, 360-364, 436, 498, 743, 922, 924, 943-948, 960
Positive bevel, 138-144, 149, 159-161
Post-radiation, 58, 59, 77
Post-threshold gate charge, 413
Potential barrier, 169, 171, 195, 296, 433, 480, 481, 483, 485-487, 490, 496, 786
Potential contours, 294, 295, 297
Potential crowding, 294
Potential distribution, 96, 97, 105, 110, 117, 121, 208, 282, 294, 305, 309, 486
Power dissipation, 3, 5-7, 10, 36, 65, 70, 82, 91, 168, 180, 181, 186-187, 189-192, 194, 198, 228, 230, 236, 245, 251, 269, 270, 274, 287, 427, 429, 430, 440, 442, 443, 449, 456, 472, 473, 572, 579, 580, 583, 585, 588, 589, 598, 607, 609, 610, 615, 663, 671, 691, 704, 709, 712, 722, 725, 780, 877, 878, 924, 951, 977, 983, 1029-1031
Power gain, 509, 511, 512, 520, 533, 619
Power handling capability, 279, 626, 740, 741
Power loss, 3, 5, 7, 8, 11, 12, 55, 102, 169, 176, 177, 189, 192, 230, 236, 245, 270, 272, 273, 280, 300, 409, 413, 427-430, 432, 443, 456, 598, 698, 701, 798, 857, 907-913, 1009, 1027-1046
Power loss analysis, 1029-1032, 1037, 1038, 1041
Power loss optimization, 907-913, 919-920
Power MOSFET, 1, 2, 9-11, 43, 49-52, 54, 104, 106, 137, 155, 279-499
Power Semiconductor Research Center (PSRC), 1050
Power transfer, 510, 512
Pre-avalanche, 184-185, 193, 199
Pre-breakdown multiplication, 185
Pre-radiation, 58
Press-pack, 741
Pre-threshold gate charge, 413
Process technology, 20, 327, 430, 432, 460-465
Protection, 1, 694-698, 746
Proton radiation, 994
Pulsed operation, 449
Pulse width modulation (PWM), 245, 768, 1027-1029
Punch-through, 101-104, 203, 216, 232, 258, 263, 266, 267, 270-274, 538, 743, 761, 764, 765, 770, 836, 840, 845, 847, 849, 869, 872, 874, 875, 877, 887
Punch-through diode, 101-104
Punch-through structure, 263, 266, 267, 270, 272, 273, 761, 877
QQuasi-saturation region, 565
RRadiative recombination, 59, 60
Radius of curvature, 110, 112, 113, 115, 116, 119, 122-124, 126, 150
Ramp drive, 701, 704, 705
Ramp rate, 236-245, 247, 248, 251-254, 256-258, 260, 262, 266, 269, 683, 701, 705, 706, 713, 858, 860-864
Reach-through, 155-158, 292, 293, 297, 476-478, 494, 496, 516, 520, 526, 547, 577, 633, 636, 637, 746, 749, 754, 758, 762, 763, 766, 768, 771, 774
Reach-through breakdown, 157, 292, 315, 320, 342, 433, 478, 479, 482, 535, 633, 749, 754, 881
Reactive ion etching, 460, 966
Recessed gate structure, 979-980
Recombination, 8, 59-61, 63, 64, 66-68, 70, 72, 73, 172, 204-206, 212, 217, 220, 273, 521, 527, 536, 540, 569, 572, 654, 658, 709, 763-764, 878, 900, 1007
Recombination center, 60, 62-80, 205, 206, 763, 764, 994
Recombination lifetime, 59-82, 263, 265, 271, 273, 576, 681, 711, 796, 886
Refractory gate, 285, 315, 434
Reliability, 270, 286, 327, 459, 460, 480, 481, 495, 780, 967, 979
Remote emitter, 653, 664
Remote gate triggering, 731
Resistive load, 244, 574, 575, 577-581, 585, 631, 667, 867-869, 873-876, 879, 880
Resistivity, 17, 18, 23, 34, 51-59, 70, 74-76, 78, 79, 162, 174, 239, 301, 334, 339, 352, 489, 493, 554, 556-557, 626-628, 657, 743, 924-925
Reverse active region, 567
Reverse biased safe-operating-area, 611, 952, 956-960
Reverse blocking, 6, 8, 142, 148, 158, 168, 179-187, 203, 204, 208, 232-236, 245, 629, 631-636, 638, 641, 644, 676, 700, 727, 738, 746, 753
Reverse conducting structure, 1006-1009
Reverse recovery, 102, 167, 176, 228, 244-262, 265-270, 273, 274, 453, 454, 468, 607, 631, 680, 681, 683, 856, 857, 904, 907, 924, 1029, 1030, 1032-1034, 1038, 1040, 1042-1044
Reverse recovery charge, 271, 272
Reverse recovery process, 244-246, 252-255, 260, 262-264, 269, 453, 631, 679-681, 683, 698, 1029
Reverse recovery time, 245, 271-273, 453
Reverse transfer capacitance, 390, 392, 393, 397, 398, 401, 402, 405, 407
Richardson's constant, 172
Rise-time, 666, 667, 708
Robotics, 3, 1050
Ruggedness, 1, 348, 372, 447, 460, 507, 741
Rupture, 459, 465, 480, 489, 495, 496, 498
SSaddle junction, 300, 960
Safe-operating-area, 447-449, 508, 607-608, 611, 615, 951-952, 956, 960, 961, 974-975
Saturated drain current, 8, 325, 326, 384, 385, 440
Saturated drift velocity, 35, 39-41, 50, 250, 378, 380, 536, 593, 605, 611, 720, 821, 835
Saturation current density, 174, 193, 218, 553, 556, 948
Saturation region, 300, 566, 571, 573
Schottky barrier height, 169, 171, 172, 174, 176-178, 180, 181, 183, 188, 190-192, 194, 196
Schottky barrier lowering, 181-184, 186, 193, 197, 200
Schottky contact, 5, 16, 173, 182, 187, 197
Schottky rectifier, 8, 9, 21, 101, 167-199, 203, 204, 1027, 1031, 1033, 1034, 1036, 1038, 1040, 1041, 1043-1045
Screening, 27-30, 197, 402-404, 407, 433, 444, 496
Screening parameter, 403
Screening radius, 28
Self-aligned process, 460
Self-protected thyristors, 691, 693
Semi-insulating oxygen doped polysilicon (SIPOS), 162
Shallow P-region, 94, 147, 234, 738
Shallow trench, 973, 999, 1000, 1002-1004
Sheet resistance, 330, 331, 361, 434, 435, 446, 447, 489, 490, 610, 645, 647, 656, 657, 659, 662, 674, 675, 677, 679, 688, 691, 696, 723, 724, 922, 924, 925, 929-931, 946, 948, 950, 958, 974, 975
Shielded planar MOSFET, 482, 483
Shielded trench MOSFET, 494-498, 1033
Shielding, 187, 382, 481-483, 485, 489-491, 496, 498, 993
Shielding region, 481, 483, 489-494, 498
Shinkansen bullet train, 1041
Shockley-Read-Hall recombination, 60-63
Shoot-through current, 444, 445
Short-circuit, 348, 467, 833, 960-963, 977, 978, 980, 1005, 1006
Short-circuiting, 291, 292, 445, 461, 476, 482, 741, 744, 921
Short circuit safe-operating-area, 960-964, 978
Shorted-base breakdown voltage, 519
Shorting array, 733
Shunting resistance, 617, 642, 643
Signal distortion, 8, 375
Silicide, 194, 330, 361, 435
Silicon carbide, 9, 15, 23-27, 31-33, 36, 38, 40, 45, 50, 84, 167, 169, 172-176, 185-186, 188, 193, 203-204, 230-232, 465-498, 1027-1046
Silicon carbide devices, 26, 167, 173, 185, 186, 188, 199, 465-498
Silicon carbide rectifiers, 185-187, 203
Silicon dioxide, 108, 109, 133, 162, 197, 317, 378, 461, 464, 480, 494
Silicon MOSFET, 282, 466, 467, 470, 472, 475, 1037, 1042
Silicon nitride, 162, 197
Silicon P-i-N rectifier, 167, 203, 204, 216, 228, 230, 235, 242, 244, 256, 266, 274, 1033, 1038, 1040, 1041, 1043
Simulation example, 113, 125, 134, 142, 147, 151, 158, 161, 177, 222, 230, 235-236, 242-244, 256-262, 266-269, 293-298, 341-343, 366-368, 370-371, 376-377, 383-385, 395-399, 404-408, 416-417, 419-423, 425-426, 468-475, 485-489, 494-498, 518-520, 544-550, 558-559, 563-565, 573-574, 580-584, 586-588, 599-607, 648-651, 659-662, 669-671, 681-685, 693-694, 712-721, 756-760, 772-775, 782-783, 789-790, 794-795, 797-803, 805-807, 812-813, 815, 819-820, 825-828, 832, 842-844, 847, 852-853, 855, 864-865, 867, 874-876, 884-887, 893-896, 901-904, 908-911, 918-919, 926-928, 930-931, 935-939, 941-943, 950-951, 954-955, 964-973, 976-978, 984-985, 988-991, 1001-1006, 1009-1014
Smart power technology, 1051
Snubbers, 12, 467, 747, 1027
Soft recovery, 263, 269
Solubility, 76, 628, 629
Source, 10, 244, 279, 280, 282-286, 289, 291, 293, 296, 300, 321, 327, 329-330, 348, 358, 361, 389, 399, 459, 462, 465-467, 490
Source resistance, 350
Space-charge generation, 65, 66, 72, 75, 91, 180, 233, 234, 527, 636, 644, 733, 754, 755, 769-771
Space-charge generation current, 65, 72, 75, 180, 181, 233, 234, 236, 754, 755, 769-771
Space-charge generation lifetime, 65-67, 233, 234, 527, 620, 755, 770
Space charge region, 172, 233, 249, 250, 254, 258, 263, 264, 267, 540, 544, 683, 685, 706, 707, 709, 716-721, 820, 821, 824-828, 830, 831, 833, 835, 836, 840, 841, 843, 846-854, 868-870, 875, 878-880, 886-889, 895, 896, 898, 902, 903, 952-954, 956, 958
Space charge region width, 544, 685, 707
Space heater, 867, 988
Spacing, 7, 8, 27, 120-129, 131, 469, 488, 491, 492, 647, 659, 672
Specific capacitance, 187, 188, 312, 331, 350, 353, 355, 361, 387, 388, 390-392, 400, 401, 423, 435, 492
Specific contact resistance, 83, 329, 330, 360, 489
Specific gate capacitance, 378
Specific heat, 962
Specific load resistance, 871, 873
Specific on-resistance, 15, 17-20, 99-101, 174, 177, 185, 280-282, 285, 291, 293, 300, 327, 329-371, 393, 400, 402, 415, 424, 431, 434, 459, 467, 482, 492
Specific output resistance, 382-385, 565, 833, 848, 856
Spherical junction, 108, 109, 116-119, 134, 198, 299, 725
Spoke design, 672
Spreading angle, 337, 343, 367, 370, 371
Spreading resistance, 493
Spreading velocity, 667, 671
Square array, 299, 351-354, 646, 647, 944
Square cell, 350, 352, 355, 944, 945, 947
Square-law characteristics, 326
Square window, 944-945
Step drive, 700, 701, 704, 705
Storage time, 303, 589, 591-593, 598, 600, 604, 698, 701, 703-706, 709, 713, 718, 721
Storage time analysis, 703-704
Stored charge, 102, 168, 178, 188, 228, 230, 236, 244, 247, 250, 251, 255, 256, 258, 263, 265, 267, 274, 508, 514, 570, 572, 576, 577, 579, 584, 589-596, 604, 611, 617, 619, 663-665, 679, 680, 698, 703-708, 710, 711, 718, 719, 721-723, 731, 732, 808, 857, 865, 866, 868, 869, 872, 878, 881-883, 886, 887, 890, 891, 895, 896, 899, 1003, 1004, 1009, 1014, 1029
Strong inversion, 44, 47, 304, 309-312, 322, 323, 478
Submicron, 315, 377, 523
Substrate current, 173
Substrate resistance, 176, 339, 364
Substrate resistivity, 500-503
Substrate thickness, 339
Super linear mode, 8, 377-381
Surface charge, 45, 154, 305
Surface charge analysis, 305
Surface concentration, 52, 95, 104, 137, 138, 145, 222, 236, 416, 419, 425, 518, 520, 544, 547, 558, 565, 632, 745, 756, 772, 787, 788, 793, 804, 807, 812, 813, 815, 916, 924, 925, 937, 975, 1017
Surface degradation, 46, 298
Surface doping concentration, 83, 104, 113, 125, 134, 142, 147, 330, 360, 813, 901, 911, 912, 935
Surface electric field, 45, 141, 142, 145-147, 149, 159, 161, 162
Surface passivation, 162
Surface potential, 304, 306-308, 310-312, 388
Surface recombination, 899, 900, 902
Surface scattering, 43, 301, 305
Surface topology, 298, 299, 350, 358, 646
Surge current, 43, 82, 198, 205, 219, 225, 274
Switching characteristics, 9, 436, 468, 574, 662, 798, 856-857, 919, 973, 1004, 1014, 1040
Switching energy, 472, 473, 598, 721
Switching energy loss, 721-722
Switching loci, 471, 575, 607
Switching power loss, 5, 270, 280, 427, 432, 443, 698, 701, 703, 1038
Switching speed, 5, 64, 66, 71, 77, 84, 167, 176, 215, 274, 279, 288, 332, 386, 407, 436, 468, 516, 572, 739, 794, 796, 808, 966, 973, 982, 991, 997, 999, 1003, 1007, 1009, 1014, 1034
Switching transient, 3, 70, 72, 188, 270, 280, 287, 474, 627, 721
Switching waveforms, 3, 4, 189, 578, 585
Switch mode power supplies, 2, 169, 188, 280, 289, 427, 428, 432, 443
Symmetric blocking, 156, 729, 741, 742, 828, 912, 913, 977, 993, 1000, 1006, 1009
Symmetric structure, 700, 743, 748, 753, 754, 782, 783, 789, 791, 794, 820, 828, 833, 884, 888, 889, 897, 898, 907, 918, 984, 988, 990
Sync-buck topology, 443
Sync-FET, 443-445
Synchronous rectification, 289
Synchronous rectifier, 289, 443
Synopsis, 1027-1045
TTechnology, 1, 5, 20, 23, 57, 79, 167, 194, 204, 280, 285, 317, 327, 348, 369, 428-430, 432, 460, 467, 473, 499, 507, 722, 1014, 1045, 1049-1051
Telecommunications, 2
Television sweep, 2
Temperature, 5, 24-26, 29, 31, 33-38, 40, 42, 108, 174, 177, 180-181, 189-194, 228-229, 234-236, 285, 317, 449, 454-457, 476, 484, 609-610, 627, 636, 641, 645, 679, 753, 755, 767, 962-963, 986-988
Temperature coefficient, 228, 456, 986, 988
Thermal conductivity, 24, 468
Thermal cycling, 10
Thermal diffusion length, 963
Thermal diffusivity, 962
Thermal generation, 25, 51
Thermal impedance, 190, 327, 449, 780
Thermal neutrons, 55-57, 59, 993
Thermal oxidation, 283, 285, 317, 498
Thermal resistance, 190, 448, 607, 608, 615
Thermal velocity, 62
Thermionic field emission, 186
Thevenin's equivalent circuit, 436
Third quadrant, 6, 159, 160, 167, 286-289, 453, 513, 625, 631, 632, 650, 728-730, 748, 913, 1006
Three-dimensional view, 115, 127-129, 134, 341, 368, 487, 601-604, 617, 715-718, 720, 789, 794, 926, 969, 1005, 1011
Threshold voltage, 290, 296, 298, 304, 311-323, 327, 331, 333, 373, 410, 414, 437, 444, 446, 454-457, 467, 479-480, 483-485, 498
Thyratron, 625
Thyristor, 1, 2, 10-13, 51-55, 57, 59, 77, 82, 95, 104, 107, 137-139, 142, 144, 146, 155-160, 162, 625-733, 738, 747, 921-922, 967, 975
Titanium, 330, 340, 361, 365, 462, 465
Topology, 293, 296, 298, 300, 350, 358, 443, 444, 464, 646, 704, 768, 913, 914, 943, 945-948, 959, 960, 995, 1027, 1028
Totem pole configuration, 768
Traction, 2, 625, 626, 698, 733, 739, 740, 1014, 1041
Trade-off analysis, 192-193, 274
Trade-off curve, 193, 270-274, 907-909, 911-913, 919, 920, 973, 974, 985-986, 993, 994, 1009, 1014
Transconductance, 46, 287, 288, 325, 326, 374, 375, 377, 378, 380, 381, 383, 411, 415, 417, 421, 423, 439, 456, 457, 818, 819, 949
Transfer characteristics, 343, 367, 373-377, 384, 396, 471, 496, 497, 935
Transient current, 237, 597
Transition time, 472, 577, 582, 585, 587, 598, 600
Transit time, 576, 579, 582, 584, 663-667, 670
Transparent emitter, 808, 811-816, 849-856, 877, 896-904, 906, 907, 911-913
Trapped charge, 317
Trapping, 45, 481
Trench, 10, 17, 18, 50, 280, 285, 286, 296-298, 358-360, 362, 363, 369, 372, 399-402, 432, 459, 460, 462-464, 489-491, 493, 494, 498, 499, 693, 966, 967, 979, 980, 999-1005
Trench bottom, 359, 364, 367, 370, 372, 403, 490, 1000
Trench corner, 286, 296-298, 373, 967-969, 979, 1002, 1003
Trench depth, 17, 297, 363, 373, 403, 693, 972, 995, 999-1004
Trench gate, 280, 283, 285, 361, 407, 458, 460, 462, 463, 465, 467, 469, 489-498, 739-741, 966-980, 995, 999-1006, 1014, 1033
Trench JFET/MESFET, 465, 466
Trench refill, 464, 1002, 1005
Trench sidewalls, 50, 367, 370, 459, 490, 498, 967, 968, 980
Trench width, 297, 360, 400-404, 406-408, 421, 422, 424-426, 431, 493, 494, 968, 975, 1005
Triac, 625, 631, 726, 728-733, 913
Triggering mode, 729
Triode-like characteristics, 728, 746
Tunneling, 83, 171, 172, 186, 481, 1006
Tunneling coefficient, 186
Tunneling current, 83, 167, 171, 186-187, 196, 199
Turn-off criterion, 701-703
Turn-off power loss, 11, 273, 722, 857, 907, 992
Turn-off transient, 5, 247-249, 437, 440-442, 574, 589, 593, 595, 598, 601-606, 611, 683, 700, 705, 715-720, 867, 874, 883, 884, 892, 893, 900, 901, 952
Turn-on protection, 694-698
Turn-on transient, 5, 243, 417, 426, 434, 437-440, 574, 576, 579, 580, 582, 585, 665-668, 670, 671, 686, 864, 952
Two-dimensional numerical simulations, 113, 125, 126, 134, 142, 147, 152, 158, 161, 222, 270, 273, 280, 294, 297, 341, 366, 370, 376, 383, 395, 404, 416, 419, 422, 425, 485, 494, 544, 563, 573, 580, 586, 599, 648, 659, 669, 683, 693, 712, 782, 789, 794, 797, 802, 805, 807, 812, 815, 819, 832, 842, 847, 855, 918, 926, 937, 941, 950, 967, 970, 972, 976, 990, 1001, 1002, 1004, 1009
Typical power rectifier, 6
Typical transistor, 7, 8
UU-MOSFET, 9, 10, 280, 283, 285-286, 296-298, 358-373, 399-408, 412, 421, 423, 430, 458, 462, 489-498
Uninterruptible power supply, 2, 1050
Unipolar power devices, 8-10, 14, 66
United States, 980
Un-terminated, 150
VVacuum level, 301
Vacuum tubes, 1, 507, 625
Valence band, 24, 26, 27, 35, 59-61, 64, 67, 69, 72, 81, 92, 302, 304, 307
Variable frequency motor drives, 856
Variable speed motor drive, 1050
VD-MOSFET, 279, 280, 284-286, 289, 292-296, 299, 315, 318, 327-358, 371, 389-395, 414, 418, 421, 423, 426-434, 461
Velocity saturation, 39, 377
Ventilation, 1040
Vertical doping profile, 509, 742, 743, 757, 930, 967
Vertical structure, 282
V-groove, 283, 284, 296, 317, 460
V-MOSFET, 283-284, 497, 988
Voltage blocking mode, 466-467, 470, 510, 512
Voltage over-shoot, 236, 237, 242-244, 607, 858, 863, 864
Voltage rating, 3, 7, 137, 226, 230, 263, 372, 448, 454, 460, 514, 626-628, 654, 692, 698, 739, 740, 743, 792, 907, 916, 980-986, 997, 1007, 1027, 1032, 1033, 1037, 1038, 1041, 1042
Voltage-Regulator Module (VRM), 91, 443-445, 1052
Voltage rise-time, 592-594, 600, 604, 605, 706-709, 713, 718-722, 877, 879-881, 884, 885, 889, 890, 893, 894, 896, 898, 901, 902, 906, 956, 1014
Voltage supply, 409
Volumetric specific heat, 962
WWafer thinning, 369
Weak inversion, 45, 46, 304, 307, 308, 311
Webster effect, 529, 545
Wet oxidation, 46, 47
Wide band-gap semiconductors, 15, 23, 499, 1036
Wireless base-station, 8
Work function, 169, 170, 194, 302, 313-316, 329, 360, 468, 469, 475, 484, 932
YYield, 18, 28, 106, 111, 118, 130, 186, 192, 212, 214, 219, 264, 311, 348, 461, 464, 530, 553, 556, 557, 563, 570, 577, 590, 591, 593, 596, 654, 659, 665, 666, 678, 689, 704, 707, 708, 710-712, 741, 763, 781, 784, 786-788, 792, 796, 800, 810, 822, 823, 829, 833, 836-838, 848, 871, 882, 891, 906, 940, 953, 956, 958
ZZero-bias depletion width, 31, 32, 333, 334, 344, 488, 492, 494, 958
